Current-Regulating Hot-Swap Controller with
DualSpeed/BiLevel Fault Protection
2 _______________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(V
IN
= +2.7V to +13.2V, T
A
= -40癈 to +85癈, unless otherwise noted. Typical values are at V
IN
= +5V and T
A
= +25癈.) (Note 2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress rating s only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 1: ON can be pulled below ground. Limiting the current to 2mA ensures that this pin is never lower than about -0.8V.
V
IN
to GND...........................................................................+15V
STAT to GND..........................................................-0.3V to +14V
GATE to GND ..............................................-0.3V to (V
IN
+ 8.5V)
ON to GND (Note 1) ................................................. -1V to +14V
CSPD to GND.............-0.3V to the lower of (V
IN
+ 0.3V) or +12V
VSEN, CTIM to GND....................................-0.3V to (V
IN
+ 0.3V)
Current into ON...................................................................?mA
Current into Any Other Pin................................................?0mA
Continuous Power Dissipation (T
A
= +70癈)
SO (derate 5.9mW/癈 above +70癈)........................... 471mW
Operating Temperature Range ...........................-40癈 to +85癈
Storage Temperature Range.............................-65癈 to +150癈
Lead Temperature (soldering, 10sec)............................ +300癈
Start-up is initiated only if V
GATE
is less than this
voltage
ON = V
IN
I
GATE
= 8.5礎, measured above V
IN
Measured with respect to V
IN
; voltage at which
internal clamp circuitry is triggered
During start-up (current regulation provided by
fast comparator)
Time from current overload to V
GATE
< 0.1V,
C
GATE
= 1000pF to GND (triggered by the fast
comparator during normal operation)
VSEN = V
IN
V
GATE
= V
IN
(Note 4)
CTIM = floating
10mV overdrive, from overload condition to GATE
discharging
V
IN
- VSEN
V
IN
- V
SEN
CSPD = floating
100nF on CTIM
100nF on CSPD to GND
CONDITIONS
V
0.1
Gate Overvoltage Threshold
V
2.7
5
Minimum Gate Drive Voltage
V
6.7
7.5
Maximum Gate Voltage
80
Gate Discharge Current
祍
60
t
OFF
Turn-Off Time
礎
100
I
GATE
Gate Charge Current
祍
5.5
ms
21
31
41
t
START
Start-Up Period
(Note 3)
mA
0.6
1
I
Q
Supply Current
V
2.7
13.2
V
IN
Input Voltage Range
礎
0.2
10
I
B,VSEN
VSEN Input Bias Current
ns
460
t
FCD
Fast Comparator Response
Time
mV
180
200
220
V
FC,TH
Fast Comparator Threshold
mV
45
50
55
V
SC,TH
Slow Comparator
Threshold
祍
10
20
40
t
CSPD
Slow Comparator Response
Time
ms
10
20
40
UNITS
MIN
TYP
MAX
SYMBOL
PARAMETER
During turn-off, triggered by a fault in normal
operation or ON falling edge
礎
75
225
550
I
GATE,DIS
POWER SUPPLIES
MOSFET DRIVER
CURRENT CONTROL
V
IN
e 5V
V
IN
e 2.7V
T
A
= +25癈
T
A
= T
MIN
to T
MAX
43.5
56
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